TEA1762T_2
?NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 25 April 2007
6 of 15
NXP Semiconductors
TEA1762T
GreenChip synchronous rectier controller
7.9 Driver
The driver circuit to the gate of the external power MOSFET has a source capability of
typically 250 mA and a sink capability of typically 2.7 A. This permits fast turn-on and
turn-off of the power MOSFET for efcient operation. The output voltage of the driver is
limited to 10 V (typical). This high output voltage will drive all MOSFET brands to the
minimum on-state resistance.
During start-up conditions (V
CC
< V
startup
) and undervoltage lock-out the driver output
voltage is actively pulled low.
7.10 Power ground and sense ground
The TEA1762T has two ground connections. The sense ground ensures an increased
accuracy of the output voltage of the switched mode power supply and can also be used
to compensate for cable losses on the output of the converter. The grounds are internally
connected via two anti-parallel diodes.
8. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). All voltages are measured with respect to power
ground (pin 2); positive currents ow into the chip. The voltage ratings are valid provided other ratings are not violated; current
ratings are valid provided the maximum power rating is not violated.
Symbol
Parameter
Conditions
Min
Max
Unit
Voltages
V
CC
supply voltage
continuous
0.4
+38
V
V
OPTOREG
voltage on pin OPTOREG
continuous
0.4
+38
V
V
OPTOPROT
voltage on pin OPTOPROT
continuous
0.4
+38
V
V
SRSENSE
voltage on pin SRSENSE
continuous
-
+120
V
V
VSENSE
voltage on pin VSENSE
continuous
0.4
+5
V
V
ISENSE
voltage on pin ISENSE
0.4
+5
V
V
PROTECT
voltage on pin PROTECT
0.4
+5
V
V
SENSEGND
voltage on pin SENSEGND
[1]
0.4
+0.4
V
Currents
I
OPTOREG
current on pin OPTOREG
-
+6
mA
I
OPTOPROT
current on pin OPTOPROT
-
+6
mA
I
DRIVER
current on pin DRIVER
duty cycle < 10 %
0.8
+3
A
I
VREF
current on pin VREF
2
-
mA
I
SRSENSE
current on pin SRSENSE
3
-
mA
General
P
tot
total power dissipation
T
amb
< 80 癈
-
0.65
W
T
stg
storage temperature
55
+150
癈
T
j
junction temperature
20
+150
癈
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